with unparalleled energy efficiency
Currently the $160bn per annum memory market is dominated by DRAM and flash. They both have strengths, but also significant weaknesses, making them only suitable for specific roles.
ULTRARAM™ is a ‘universal memory’ that combines the advantageous properties of DRAM and flash into a single memory concept, without any of their disadvantages.
Our patented memory technology uses quantum mechanical resonant-tunnelling to provide an unmatched combination of speed, non-volatility, endurance and energy efficiency.
ULTRARAM™ will allow the devices of tomorrow to have improved performance, whilst consuming significantly less energy.
An Ultra-Efficient Memory
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Prof Manus Hayne
Senior academic and inventor of ULTRARAM™
Mr James Ashforth-Pook
Dr Peter Hodgson
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ULTRARAM is developed in partnership with Lancaster University and funded by the EPSRC (under IAA grant EP/X525583/1 and the Future Compound Semiconductor Manufacturing Hub grant EP/P006973/1), by the Materials Social Futures doctoral training Program of the Leverhulme Trust, by the European Commission via ATTRACT (grants 777222 and 101004462), by MSCA-ITN QUANTIMONY (grant 956548) and by the Innovate UK ICURe program.