Ultra-Efficient Memory

Faster Memory

Ultra-Efficient Memory

Non-Volatile
Memory

Ultra-Efficient Memory

High-Endurance
Memory

ULTRARAM™

A non-volatile computer memory
with unparalleled energy efficiency

Play Video about ULTRARAM Video

Speed

High Endurance

Non-Volatility

Currently the $160bn per annum memory market is dominated by DRAM and flash. They both have strengths, but also significant weaknesses, making them only suitable for specific roles.

ULTRARAM™ is a ‘universal memory’ that combines the advantageous properties of DRAM and flash into a single memory concept, without any of their disadvantages.

Our patented memory technology uses quantum mechanical resonant-tunnelling to provide an unmatched combination of speed, non-volatility, endurance and energy efficiency.

ULTRARAM™ will allow the devices of tomorrow to have improved performance, whilst consuming significantly less energy.

An Ultra-Efficient Memory

Single bit switching energy at 20 nm node is...

100X

100x lower than DRAM

1000X

1000x lower than Flash

10⁴X To 10⁷X

10,000x to 10,000,000x lower than other emerging memories

Applications

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Cloud Computing

Consumer Electronics

IoT

Space

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Other

Application area

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RAM speed	Not at all importantRAM speed Not at all important	Low importanceRAM speed Low importance	NeutralRAM speed Neutral	ImportantRAM speed Important	Very importantRAM speed Very important
The upfront cost of RAM	Not at all importantThe upfront cost of RAM Not at all important	Low importanceThe upfront cost of RAM Low importance	NeutralThe upfront cost of RAM Neutral	ImportantThe upfront cost of RAM Important	Very importantThe upfront cost of RAM Very important
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Tell us more about your application and your thoughts on ULTRARAM :

Our team

Senior academic and inventor of ULTRARAM™

Global deep tech entrepreneur and semiconductor industry expert

Senior researcher and expert in III-V nanotechnology

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Acknowledgements

ULTRARAM is developed in partnership with Lancaster University and funded by the EPSRC (under IAA grant EP/X525583/1 and the Future Compound Semiconductor Manufacturing Hub grant EP/P006973/1), by the Materials Social Futures doctoral training Program of the Leverhulme Trust, by the European Commission via ATTRACT (grants 777222 and 101004462), by MSCA-ITN QUANTIMONY (grant 956548) and by the Innovate UK ICURe program.

Faster Memory

Non-Volatile
Memory

High-Endurance
Memory